<p>The photocatalytic activity of GaN (.) is higher than that of TiO2 or SrTiO3 (◯). In addition, the band gap energy of a mixed crystal thin film wherein InN is mixed in GaN corresponds to the photon energy of visible light, so that the photocatalytic action is caused by absorption of both ultraviolet light and visible light. Consequently, the mixed crystal thin film serves as an extremely efficient photocatalyst.</p>
申请公布号
WO2005089942(A1)
申请公布日期
2005.09.29
申请号
WO2005JP05457
申请日期
2005.03.17
申请人
JAPAN SCIENCE AND TECHNOLOGY AGENCY;KOINUMA, HIDEOMI;MATSUMOTO, YUJI;SUMIYA, MASATOMO;HUKE, TOSHIROU;NAKAJIMA, KAZUKO