发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT CARD, IC TAG, RFID, TRANSPONDER, BILL, NEGOTIABLE SECURITIES, PASSPORT, ELECTRONIC APPARATUS, BAG, AND CLOTHING
摘要 <P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device used for an ID chip which has a proper throughput and is hard to counterfeit. <P>SOLUTION: This method for manufacturing a semiconductor device includes a modulation circuit, a demodulation circuit, a logic circuit, a memory circuit, and an antenna circuit on an insulating board. The memory circuit is a non-volatile memory circuit. The data of the non-volatile memory circuit are written in manufacturing, and the element formation of a data section is performed by using electron beam exposure or laser exposure. For the exposure at other parts, mirror projection exposure, step-and-repeat exposure, or step-and-scan exposure are used. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005268774(A) 申请公布日期 2005.09.29
申请号 JP20050042787 申请日期 2005.02.18
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KOYAMA JUN
分类号 G03F7/20;G06K19/07;G06K19/077;G06K19/10;H01L21/027;H01L21/77;H01L21/8246;H01L21/84;H01L23/522;H01L27/10;H01L27/112;H01L27/12;H01L27/13;H01L29/786 主分类号 G03F7/20
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