| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory which protects data at high speed when electric power supply is cut off, and achieves a function equivalent to a standard DRAM at normal operation, and to provide its manufacturing method. <P>SOLUTION: The semiconductor memory 100 includes a plurality of memory cells 11 arranged in a matrix form, and each of a plurality of the memory cells 11 is connected to a first word line 21, a second word line 22, a first bit line 23 and a second bit line 24. Moreover, each of a plurality of the memory cells 11 includes a transistor 30, a capacitor 40 and a non-volatile memory 50. The transistor 30 includes a gate 32 connected to the first word line 21, a drain 2a connected to the first bit line 23 and a source 2b connected to the capacitor 40. In addition, the non-volatile memory 50 is connected to the second word line 22, the second bit line 24 and the source 2b of the transistor 30. A region between the source and the drain of the non-volatile memory 50 is formed so as to become non-conducting. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
