发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To realize a stable operation at a low voltage in a semiconductor device, a semiconductor memory device, especially a nonvolatile memory, and a system LSI (microcomputer) on which the novolatile memory is mounted. <P>SOLUTION: This semiconductor device includes: a plurality of memory cells; a central processing unit; a timer circuit for measuring RESET time; and a timer circuit for measuring SET time. A RESET operation is easily carried out by setting the threshold value of an NMOS transistor used for the memory cells lower than that of a peripheral circuit. Further, the direction of a current flowing through the RESET and the SET is changed, and a bit line is driven at a high speed to prevent an erroneous operation. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005267837(A) 申请公布日期 2005.09.29
申请号 JP20050001979 申请日期 2005.01.07
申请人 RENESAS TECHNOLOGY CORP 发明人 OSADA KENICHI;TAKEMURA RIICHIRO;TAKAURA NORIKATSU;MATSUZAKI NOZOMI;KAWAHARA TAKAYUKI
分类号 G11C13/00;G06F13/00;G11C11/00;G11C16/02;G11C16/10;G11C16/26;G11C16/34;G11C19/08;H01L27/10;H01L27/105 主分类号 G11C13/00
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