| 摘要 |
A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.
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