发明名称 |
Electrical biasing of gas introduction means of plasma apparatus |
摘要 |
A method of treating or processing at least one substrate/workpiece in a plasma comprises steps of: (a) providing an apparatus comprising a chamber defining an interior space; (b) mounting/positioning at least one substrate/workpiece in the interior space; (c) injecting gas(es) into the interior space by means of an electrically isolated gas supply means having at least one outlet orifice; (d) generating a plasma in the interior space; (e) applying a bias potential to the gas supply means to suppress plasma formation at the at least one outlet orifice; and (f) treating/processing the at least one substrate/workpiece in the plasma.
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申请公布号 |
US2005211544(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20040810638 |
申请日期 |
2004.03.29 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
REITER JEFFREY S. |
分类号 |
C23C14/00;C23C14/34;H01J37/32;(IPC1-7):C23C14/34 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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