| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching composition for a thin-film transistor liquid-crystal display device employed for selective etching of a transparent conductive film (such as an ITO film) of the thin-film transistor liquid-crystal display, the etching composition having a property of a low aging rate, minimizing the influence on other metal wirings so that a stable etching can be effected, and having a high etching rate and the capability of reducing side etching. SOLUTION: The etching composition contains 12 to 30 mass percent of hydrochloric acid, 1 to 15 mass percent of acetic acid, 0.1 to 5 mass percent of silver nitrate, aluminum nitrate, etc. as an additive agent and extra-pure water and is useful as an etching composition to etch a transparent conductive film stably. COPYRIGHT: (C)2005,JPO&NCIPI |
