| 摘要 |
PROBLEM TO BE SOLVED: To stabilize the resistance value of a metallic thin film resistor and the contact resistance between the resistor and a wiring pattern, in a semiconductor device provided with the metallic thin film resistor. SOLUTION: In the semiconductor device, a second interlayer insulating film 19 is formed on a first interlayer insulating film 5 containing the forming area of the wiring pattern 11 and connection holes 21 are formed in the second interlayer insulating film 19 correspondingly to both ends of the metallic thin film resistor 23 and wiring pattern 11. The upper ends 21a of the connection holes 21 are formed in tapered shapes and side walls 22 are formed on the internal walls of the holes 21. In addition, the metallic thin film resistor 23 is formed on the second interlayer insulating film 19 from the area between the connection holes 21, 21 to the inside of the holes 21 and the surface of the wiring pattern 11. COPYRIGHT: (C)2005,JPO&NCIPI |
