发明名称 |
Manufacturing methods of semiconductor device and solid state image pickup device |
摘要 |
A manufacturing method of manufacturing a semiconductor device having a plurality of wiring layers. The method includes the steps of forming a wiring by a first wiring layer as a pattern by dividing a desired pattern into a plurality of patterns, connecting the divided patterns, and exposing them, wherein a position of the connection is formed in parallel with the wiring which is formed by the first wiring layer, and forming a wiring by a second wiring layer having an area which intersects the connecting position by a batch processing of exposure.
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申请公布号 |
US2005212096(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050132242 |
申请日期 |
2005.05.19 |
申请人 |
ITANO TETSUYA;INUI FUMIHIRO;OGURA MASANORI |
发明人 |
ITANO TETSUYA;INUI FUMIHIRO;OGURA MASANORI |
分类号 |
H01L27/14;G03F7/20;H01L21/027;H01L27/146;(IPC1-7):H01L21/44;H01L21/48 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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