| 摘要 |
A method for forming a doping superlattice using a laser is disclosed. By interfering a laser beam A ( 44 a) and a laser beam B ( 44 b) in a uniformly doped semiconductor or uniformly doped insulator ( 21 ), the uniformly doped semiconductor or uniformly doped insulator ( 21 ) is converted into a doping superlattice composed of dopant layers orientated parallel to the semiconductor's polished surface ( 57 ) or a doping superlattice composed of dopant layers orientated perpendicular to the semiconductor's polished surface ( 58 ). Using more complex laser beam interference patterns the uniformly doped semiconductor or uniformly doped insulator ( 21 ) can be converted into a doping superlattice composed of a two-dimensional array of dopant lines or dopant wires ( 108 ) or a doping superlattice composed of a three-dimensional array of dopant dots or dopant clusters ( 120 ).
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