发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <P>PROBLEM TO BE SOLVED: To prevent a malfunction of a system caused by a peak current of a flash memory. <P>SOLUTION: A mode change-over control circuit 23 has a function of changing over a high-speed operation mode in which a peak consumption current in the flash memory becomes a 1st value to/from a low consumption current mode in which the current becomes a 2nd value lower than the 1st value. When the flash memory is applied to a system to be easily influenced by a peak current and a page size of the flash memory is large, the flash memory is made to operate in the low consumption current mode. In other cases, the flash memory is made to operate in the high-speed operation mode. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005267821(A) 申请公布日期 2005.09.29
申请号 JP20040082730 申请日期 2004.03.22
申请人 TOSHIBA CORP 发明人 TAKEUCHI TAKESHI
分类号 G11C16/06;G11C8/08;G11C11/34;G11C11/56;G11C16/00;G11C16/02;G11C16/04;H01L29/78 主分类号 G11C16/06
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