| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS sensor which allows parasitic capacitance of a photoelectric transfer section to be reduced, and output conversion efficiency to be enhanced. SOLUTION: The photoelectric transfer section 307 of the CMOS sensor comprises an N type third region 107 adjacent to a gate electrode of a MOSFET 201 for control, an N+ type first region 106 in its interior, N- type plural fourth regions 117, 118 adjacent to the third region 107. For this reason, a depletion layer formed in the junction of a P type well layer 102 and a P+ type semiconductor region 103a, and the fourth region 118 can be extended in the direction of the photoelectric transfer section 307, so that the parasitic capacitance can be reduced, electric potential fluctuation by signal charges can be magnified, and the output conversion efficiency can be enhanced. COPYRIGHT: (C)2005,JPO&NCIPI
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