MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a memory device with low power consumption and high electron injection efficiency in a charge storing layer. SOLUTION: The memory device comprises a semiconductor substrate, a first impurity region and a second impurity region formed respectively by doping an impurity into the semiconductor substrate, and a gate structure formed on the substrate between the first impurity region and the second impurity region. The gate structure comprises a dielectric layer including the charge storing layer and a gate electrode, and the dielectric layer is formed asymmetrically. COPYRIGHT: (C)2005,JPO&NCIPI