| 摘要 |
PROBLEM TO BE SOLVED: To stably suppress a pushing-up of a mesa end when an element separation structure is formed while suppressing an increase in the number of processes. SOLUTION: The method comprises forming an amorphous layer 4 in a single crystal semiconductor layer 3 in an element separation region E2 by conducting an ion implantation N to a halfway depth of the single crystal semiconductor layer 3 with a mask of a resist pattern R, thinning the single crystal semiconductor layer 3 in the element separation region E2, and removing the amorphous layer 4 by conducting a dry etching of the amorphous layer 4 to leave the thinned single crystal semiconductor layer 3a in the element separation region E2. COPYRIGHT: (C)2005,JPO&NCIPI
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