SELECTING ETCHANT AND ETCHING METHOD OF SiN FILM

摘要

PROBLEM TO BE SOLVED: To provide a method which selectively perform low-temperature wet etching of an SiN film to an SiO film and Si. SOLUTION: The etchant which etches an SiN film selectively contains hydrogen fluoride, ether based solvent and/or fluorination ether based solvent, and if it is necessary water is contained further. COPYRIGHT: (C)2005,JPO&NCIPI