| 摘要 |
PROBLEM TO BE SOLVED: To easily remove a reactive product by forming an electrochemically less noble metal film 81 after etching a magnetic layer. SOLUTION: A magnetic memory device 1 comprises a magneto-resistance effect element 13 which is such that a magnetic layer (first thin film) 232, a tunnel insulation layer 233, and another magnetic layer (second thin film) 234 are laminated in order. A method of the magnetic memory device 1 comprises a process wherein, after a process of forming a top pattern 130 of the magneto-resistance effect element 1 by etching or ion-milling a top electrode layer 235 and the second thin film 234 from such a state that the top electrode layer 235 formed on the second thin film 234, the second thin film 234, and the tunnel insulation layer 233 are laminated, and the electrochemically less noble metal film 81 is so formed that it may enter between the side wall of the top pattern 130 and the reactive product 71 generated by the etching or ion-milling; and a process of removing the metal film 81 as well as the reactive product 71. COPYRIGHT: (C)2005,JPO&NCIPI
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