发明名称 |
Memory array of a non-volatile RAM |
摘要 |
Non-volatile memory cell with a single semiconductor device per memory cell. The present invention generally allows for a plurality of memory cells to be formed on a semiconductor substrate that supports a semiconductor device. A multi-resistive state material layer that changes its resistive state between a low resistive state and a high resistive state upon application of a voltage pulse is formed above the substrate, generally at a very high temperature. While the layers fabricated between the substrate and the multi-resistive state material use materials that can withstand high temperature processing, the layers fabricated above the multi-resistive state material do not need to withstand high temperature processing.
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申请公布号 |
US2005213368(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050061100 |
申请日期 |
2005.02.18 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;CHEVALLIER CHRISTOPHE |
分类号 |
G11C11/56;G11C13/00;G11C16/02;H01L21/8246;H01L27/115;H01L27/24;H01L45/00;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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