Complementary metal oxide semiconductor (CMOS) transistors having three-dimensional channel regions and methods of forming same

摘要

An integrated circuit device containing complementary metal oxide semiconductor transistors includes a semiconductor substrate and an NMOS transistor having a first fin-shaped active region that extends in the semiconductor substrate. The first fin-shaped active region has a first channel region therein with a first height. A PMOS transistor is also provided. The PMOS transistor has a second fin-shaped active region that extends in the semiconductor substrate. This second fin-shaped active region has a second channel region therein with a second height unequal to the first height.