| 摘要 |
A monolithically integrated MOS varactor switch device comprises an SOI (Silicon-an-Insulator) substrate, a gate on top of the SOI substrate, contact regions in the substrate at each side of the gate, and a well region arranged beneath the gate, wherein the gate includes a gate semiconductor layer region on top of a gate insulation layer region, and the well region interconnects the contact regions. According to the invention the contact regions are laterally separated from the gate, preferably by a distance of at least 10 nm. The contact regions as well as the well region are doped to the same doping type, and the SOI substrate is advantageously thinner than about 200 nm to allow full depletion of the silicon during use of the MOS varactor switch device.
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