| 发明名称 |
Method to make markers for double gate SOI processing |
| 摘要 |
A method of making at least one marker (MX) for double gate SOI processing on a SOI wafer is disclosed. The marker has a diffracting structure in a first direction and the diffracting structure is configured to generate an asymmetrical diffraction pattern during use in an alignment and overlay detection system for detection in the first direction.
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| 申请公布号 |
US2005214985(A1) |
申请公布日期 |
2005.09.29 |
| 申请号 |
US20050083356 |
申请日期 |
2005.03.16 |
| 申请人 |
PETRA LOO JOSINE J G;PONOMAREV YOURI V;LAIDLER DAVID W |
发明人 |
PETRA LOO JOSINE J.G.;PONOMAREV YOURI V.;LAIDLER DAVID W. |
| 分类号 |
H01L21/027;H01L21/00;H01L21/336;H01L21/84;H01L27/02;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/027 |
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