| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique capable of advancing the delivery date of semiconductor devices. <P>SOLUTION: A light shielding film 5 comprising a resist film and light transmissive patterns 6a formed by partly removing the light shielding film 5 are formed on a main surface of a mask substrate 2, a flat film 8 is formed in such a way as to cover the light shielding film 5, and phase shifters 7a comprising a resist film are further formed on the flat top surface of the flat film 8. When exposure is performed, a plurality of transfer regions arranged so that the shifters are reversed though mask patterns have the same size, shape and location are superposed on the same position and exposure is performed. Thus, a line pattern is transferred onto a positive photoresist film on a semiconductor wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
