| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the occurrence of crystal defect, i.e., dislocation in a compound semiconductor layer in a compound semiconductor wherein lattice mismatching between a substrate and the compound semiconductor layer formed on the substrate is ≥2%. <P>SOLUTION: In the compound semiconductor 1 where the buffer layer 3 and the compound semiconductor layer 4 are formed on the substrate 2, crystal defect is reduced by selecting lattice mismatching of the buffer layer 3 to the substrate 2 and its change rate. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
