| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method to prevent a shape deterioration of an opening without degrading the productivity excessively. SOLUTION: The method for manufacturing a semiconductor apparatus includes a process to adhere a supporter 5 on a surface of a semiconductor substrate 1 so as to cover a pad electrode 3 formed on the semiconductor substrate 1 through an insulating layer 2, a process to form a via-hole to reach the surface of the pad electrode 3 from the back of the semiconductor substrate 1, a process to form a first opening up to a position, where a film insulating layer 2 is not exposed, using an etching gas containing at least SF<SB>6</SB>and O<SB>2</SB>for the semiconductor substrate 1, and a process to form a second opening 8 up to a position, where the insulating layer 2 is exposed, using an etching gas containing at least SF<SB>6</SB>and CF gas for the semiconductor substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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