| 摘要 |
PROBLEM TO BE SOLVED: To provide a hydrogen barrier to protect a ferroelectric capacitor C<SB>FE</SB>from a hydrogen diffusion in a semiconductor device, and to provide a manufacturing method of the same. SOLUTION: For the hydrogen barrier to protect the ferroelectric capacitor (C<SB>FE</SB>) from the hydrogen diffusion in the semiconductor device (102), nitride-aluminum oxide (N-AlOx) is formed on the ferroelectric capacitor (C<SB>FE</SB>), and one or more silicon nitride layers (112, 117) are formed on the nitride-aluminum oxide (N-AlOx). In addition, for the hydrogen barrier, aluminum oxide (AlOx) is formed on the ferroelectric capacitor (C<SB>FE</SB>), and two or more silicon nitride layers (112, 117) are formed on the nitride-aluminum oxide (N-AlOx). Here, the second silicon nitride layer (112) contains a low silicon-hydrogen SiN material. COPYRIGHT: (C)2005,JPO&NCIPI
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