| 摘要 |
PROBLEM TO BE SOLVED: To obtain a pattern forming method which can form a detailed hole pattern while increasing dry etching endurance of resist. SOLUTION: The pattern forming method is provided with a step for forming a first resist film on an etched film, a step for patterning the first resist film, a step for forming a second resist film on the first resist film, a step wherein etch back of the second resist film is performed as far as an upper surface of the first resist film is exposed, a step which performs exposure of the whole surface by using light of wavelength by which the first resist film is exposed and the second resist film is not exposed, a step for eliminating an exposed part of the first resist film, and a step for patterning the etched film by using a left part of the first resist film and the second resist film as masks. COPYRIGHT: (C)2005,JPO&NCIPI
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