| 摘要 |
PROBLEM TO BE SOLVED: To improve the temperature characteristics of an element and hereby improve the reliability of the element by improving the heat dissipation property of the element while avoiding the difficulty of the manufacture of the element. SOLUTION: Supports 2, 2 are formed on the side of a ridge 1 located above an active layer 14. At this time, the ratio Rw of a support width Wss to the chip width Wc of the element is set to be larger than 33% and less than 52%. Consequently, a support area is more expanded than prior art, so that it is possible to dissipate produced heat at the active layer 14 to the outside (for example submount) via the ridge 1 and the supports 2, 2. As a result, the heat dissipation property of the element is improved, so that the temperature rise of the active layer 14 is suppressed to improve the temperature characteristics of the element and hence the reliability of the element. Further, since an upper limit of the width ratio Rw is less than 52%, etching between the ridge and the support is not obstructed. COPYRIGHT: (C)2005,JPO&NCIPI
|
