| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image sensing element which restrains deterioration of a residual image characteristic without causing lowering of a dynamic range at a low cost, and a manufacturing method of the solid-state image sensing element. SOLUTION: In the solid-state image sensing element 1, a conductive material 6 with optical transparency is formed in the upper layer of a second conductivity type region 4 constituting a photoelectric converter 2 together with a first conductivity type substrate region 3, ranging from the charge reading side of a charge which is subjected to photoelectric conversion in the photoelectric converter 2 to a potential applying side in the opposite side of the charge reading side via an insulating film 5. Further, a voltage applying part 7 and a voltage applying part 8 are provided to the charge reading direction side of the conductive material 6, and its opposite side and different voltages are applied to the voltage applying part 7 and the voltage applying part 8. Potential distribution of the second conductivity type region 4 is inclined by potential distribution generated in the conductive material 6, a signal charge is moved to the charge reading side, the residual image phenomenon caused by unread charge is restrained at a low cost and rapid reading is realized. COPYRIGHT: (C)2005,JPO&NCIPI
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