发明名称 |
Fabrication of nanoelectronic circuits |
摘要 |
A silicon substrate is coated with one or more layers of resist. First and second circuit patterns are exposed in sequence, where the second pattern crosses the first pattern. The patterned resist layers are developed to open holes which extend down to the substrate only where the patterns cross over each other. These holes provide a mask suitable for implanting single phosphorous ions in the substrate, for a solid state quantum computer. Further development of the resist layers provides a mask for the deposition of nanoelectronic circuits, such as single electron transistors, aligned to the phosphorous ions.
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申请公布号 |
US2005214689(A1) |
申请公布日期 |
2005.09.29 |
申请号 |
US20050132851 |
申请日期 |
2005.05.19 |
申请人 |
BRENNER ROLF;BUEHLER TILO M;CLARK ROBERT G;DZURAK ANDREW S;HAMILTON ALEXANDER R;LUMPKIN NANCY E;PAYTRICIA RITA |
发明人 |
BRENNER ROLF;BUEHLER TILO M.;CLARK ROBERT G.;DZURAK ANDREW S.;HAMILTON ALEXANDER R.;LUMPKIN NANCY E.;PAYTRICIA RITA |
分类号 |
G03F7/26;G03F7/20;G06N99/00;H01L21/027;H01L21/266;H01L21/335;H01L21/336;H01L29/66;H01L29/78;H01L49/00;(IPC1-7):G03F7/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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