发明名称 |
FUSE RIGION OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
<p>In a fuse region of a semiconductor device, and a method of fabricating the same, the fuse region includes an interlayer insulating layer on a semiconductor substrate, a plurality of fuses on the interlayer insulating layer disposed in parallel with each other, a blocking layer on the interlayer insulating layer between each of the plurality of fuses and in parallel with the plurality of fuses, and a plurality of fuse grooves recessed into the interlayer insulating layer between each of the plurality of fuses and the blocking layer.</p> |
申请公布号 |
KR20050095260(A) |
申请公布日期 |
2005.09.29 |
申请号 |
KR20040020520 |
申请日期 |
2004.03.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG, HYUCK JIN;HYUN, CHANG SUK;MOON, IL YOUNG;LEE, KANG YOON;SIM, KWANG BO;JEON, SANG KIL |
分类号 |
H01L21/82;H01L23/525;H01L29/00;(IPC1-7):H01L21/82 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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