GaN-based compound semiconductor light emitting device and method of fabricating the same

摘要

Provided are a GaN-based III - V group compound semiconductor light emitting device and a method of fabricating the GaN-based III - V group compound semiconductor light emitting device. The GaN-based III - V group compound semiconductor light emitting device includes: at least an n-type compound semiconductor layer 12, an active layer 14, and a p-type compound semiconductor layer 16, which are disposed between an n-type electrode 30 and a p-type electrode 20. The p-type electrode 20 includes a first electrode layer 22 which is formed of Ag or an Ag-alloy on the p-type GaN-based compound semiconductor layer and a second electrode layer 24 which is formed of at least one selected from the group consisting of Ni, Ni-alloy, Zn, Zn-alloy, Cu, Cu-alloy, Ru, Ir, and Rh on the first electrode layer.