Semiconductor laser and method of manufacturing the same

摘要

In an S3-type semiconductor laser, in the perpendicular plane to the traveling direction of light, when an angle of a first growth profile line to the second principal planes, the first growth profile line connecting respective lower side lines of an upper inclined plane (10a) and a lower inclined plane (8a), both inclined planes (9a, 10a) formed along the second inclined plane (8a), of the first layer (9, 10) of the second conduction type cladding layer is θ11, and an angle of a second growth profile line to the second principal planes, the second growth profile line connecting respective lower side lines of an upper inclined plane (11a) and a lower inclined plane (10a), both inclined planes (11a, 10a) formed along the second inclined plane (8a), of the second layer (11) of the second conduction type cladding layer is θ12, θ11>θ12 is satisfied.