摘要 |
<p>Organic field-effect transistor (I) comprises a substrate (1), a source electrode (2) (a), a drain electrode (6) (b), organic semi conducting material (3) (c), a charge carrier barrier layer (4) (d) and a gate electrode (5), where the energetic distance between the conduction bands and the valence bands of (d) and (c) is larger than 1.0 eV. Organic field-effect transistor (I) comprises a substrate (1), a source electrode (2) (a), a drain electrode (6) (b), organic semi conducting material (3) (c) arranged between (a) and (b), a charge carrier barrier layer (4) (d) arranged on (c) and a gate electrode (5) located on (d) (where (d) and (c) exhibits the charge carrier), where the energetic distance between the conduction bands and the valence bands of (d) and (c) is larger than 1.0 eV. An independent claim is also included for the preparation of (I).</p> |