发明名称 |
METHOD OF MANUFACTURING III-V GROUP COMPOUND SEMICONDUCTOR |
摘要 |
Production of a III-V multilayer semiconductor comprises producing a crystal layer of a III-V nitride multilayer semiconductor of formula InxGayAlzN by hydride gas phase epitaxy. The deposition pressure during epitaxial growth is no lower than 800 Torr. An Independent claim is also included for a III-V nitride multilayer semiconductor produced by the above process. Preferably initially a nitride multilayer semiconductor layer is formed on the substrate to obtain a base layer, then the III-V nitride multilayer semiconductor is formed on the base layer. The substrate is silicon (Si), gallium arsenide (GaAs), silicon carbide (SiC), zirconium boride (ZrB2) and sapphire.
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申请公布号 |
SG114605(A1) |
申请公布日期 |
2005.09.28 |
申请号 |
SG20030001302 |
申请日期 |
2003.03.14 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
KAZUMASA HIRAMATSU;HIDETO MIYAKE;SHINYA BOHYAMA;TAKAYOSHI MAEDA;YASUSHI IYECHIKA |
分类号 |
C30B29/38;C30B25/02;H01L21/205;H01L29/201;H01L33/32;(IPC1-7):H01L21/205;H01L29/20;H01L33/00;C23C16/34;C30B29/40;C30B25/14 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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