Method of fabricating a compression-type power semiconductor device,申请号EP19950119737-传众专利搜索

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发明名称	Method of fabricating a compression-type power semiconductor device
摘要
申请公布号	EP0751574(B1)	申请公布日期	2005.09.28
申请号	EP19950119737	申请日期	1995.12.14
申请人	MITSUBISHI DENKI KABUSHIKI KAISHA	发明人	MORISHITA, KAZUHIRO;IDE, KAZUHISA;TOKUNOH, FUTOSHI
分类号	H01L29/744;H01L21/52;H01L29/04;H01L29/74;(IPC1-7):H01L29/04;H01L29/10;H01L21/332	主分类号	H01L29/744
代理机构		代理人
主权项
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