发明名称 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same
摘要 A positive resist composition for use with an electron beam, an EUV light or an X ray, the positive resist composition comprising: (A) at least one compound that generates an acid upon treatment with one of an actinic ray and radiation; and (B) a resin that increases a solubility of the resin (B) in an alkaline developer by an action of an acid, wherein the resin (B) comprises a repeating unit having an alicyclic group connected with a fluorine-substituted alcohol residue; and a pattern formation method using the composition.
申请公布号 EP1580601(A1) 申请公布日期 2005.09.28
申请号 EP20050006536 申请日期 2005.03.24
申请人 FUJI PHOTO FILM CO., LTD. 发明人 MIZUTANI, KAZUYOSHI
分类号 G03F7/004;G03F7/033;G03F7/039;H01L21/027 主分类号 G03F7/004
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