发明名称 |
Flash memory array |
摘要 |
<p>A flash memory array has silicon lines (WL0-WL7), made of doped silicon, connected to rows of memory cells. A silicon line is connected to the memory cells in the same row. <??>Metal strapping lines M2 are arranged each parallel to a silicon line; and spaced apart connectors are associated with each silicon line for electrically connecting a silicon line to its associated metal strapping line. <??>Each of the spaced apart connectors of a silicon line (WL0) is not arranged in the same column as the spaced apart connectors of an adjacent silicon line (WL1), but is arranged in the same column as the spaced apart connectors of a silicon line (WL2) adjacent to the said adjacent silicon line (WL1). <IMAGE></p> |
申请公布号 |
EP1531493(A3) |
申请公布日期 |
2005.09.28 |
申请号 |
EP20040077413 |
申请日期 |
1998.09.16 |
申请人 |
INTEGRATED MEMORY TECHNOLOGIES, INC. |
发明人 |
LIN, TIEN L.;SHEEN, BEN YAU |
分类号 |
G11C16/04;G11C8/14;G11C16/30;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L23/528 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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