发明名称 |
Nonvolatile memory device with simultaneous read/write |
摘要 |
A nonvolatile memory device with simultaneous read/write has a memory array formed by a plurality of cells organized into memory banks, and a plurality of first and second sense amplifiers. The device further has a plurality of R/W selectors associated to respective sets of cells and connecting the cells of the respective sets of cells alternately to the first sense amplifiers and to the second sense amplifiers.
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申请公布号 |
US6950337(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20030719650 |
申请日期 |
2003.11.21 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
BELLINI ANDREA;SALI MAURO;MAGNAVACCA ALESSANDRO;LISI CARLO |
分类号 |
G11C16/26;G11C16/34;(IPC1-7):G11C16/00 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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