Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device

摘要

Magnetic tunnel junction magnetic device ( 16 ) for writing and reading uses a reference layer ( 20 c) and a storage layer ( 20 a) separated by a semiconductor or insulating layer ( 20 b). The blocking temperature of the magnetisation of the storage layer is less than that of the reference layer. The storage layer is heated ( 22, 24 ) above the blocking temperature of its magnetisation. A magnetic field ( 34 ) is applied ( 26 ) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.