发明名称 Semiconductor device
摘要 The size of a power amplifier module is reduced. The power amplifier module includes a module substrate, a lower chip flip-connected to the module substrate, an upper chip stacked face up onto the lower chip, a common electrode disposed on a back surface of the upper chip, plural wires for connecting the upper chip and the module substrate with each other, plural wires for connecting the common electrode and the module substrate with each other, plural chip parts mounted on the module substrate, and a sealing portion formed on the main surface of the module substrate. The common electrode is connected to the module substrate through wires to strengthen the GND of the upper chip. Since the lower chip is flip-connected to the module substrate, the difference in size between the upper and lower chips is diminished to attain a reduction in size of the power amplifier module.
申请公布号 US6949835(B2) 申请公布日期 2005.09.27
申请号 US20040809450 申请日期 2004.03.26
申请人 RENESAS TECHNOLOGY CORP. 发明人 KONISHI SATORU;ENDOH TSUNEO;NAKAJIMA HIROKAZU
分类号 H01L25/18;H01L25/065;H01L25/07;H01L25/16;(IPC1-7):H01L23/48 主分类号 H01L25/18
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