发明名称 |
Method of reducing contamination-induced process variations during ion implantation |
摘要 |
When changing a dopant species in an implantation tool, typically a clean process is performed to reduce cross-contamination, which is considered a major issue in implant cycles applied in advanced CMOS processes. Especially, the employment of an implanter previously used for heavy ions may generate increased cross-contamination when subsequently used for boron or phosphorus implants at moderate energies. A clean implant process using xenon gas may effectively reduce this cross-contamination at shorter process times compared to a conventional argon clean step.
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申请公布号 |
US6949399(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20030602191 |
申请日期 |
2003.06.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRUEGER CHRISTIAN;HAUPTMANN NIELS-WIELAND;BECK THOMAS |
分类号 |
H01J37/317;H01L21/265;(IPC1-7):H01L21/00 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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