| 摘要 |
FIELD: crystal growing. ^ SUBSTANCE: invention relates to growing monocrystals from solution using solvent and pressure, in particular hydrothermal seed-assisted method of growing quartz monocrystals. Seed is made from ZY-cut plate oriented with its crystallographic axis in horizontal plane and with one of the axes in vertical plane, said plate further having a shield made from material indifferent to hydrothermal synthesis conditions. Seed is also characterized by being rectangular and unclosed at one side of frame. Crystallographic axis of the frame is also located in horizontal plane and crystallographic Y axis in vertical plane, while the side opposite to unclosed portion and parallel to Y axis is shielded at its two lateral sides and at its end side in direction from -X is shielded (first option). Quartz monocrystal growing seed is oriented by crystallographic axis X in horizontal plane and by one of axes in vertical plane of ZY-cut plate, whose one lateral side and end side in direction from +X are shielded. Crystallographic axis Z of the plate is also located in horizontal plane and its crystallographic axis Y thereof in vertical plane, while the second plate side oriented along crystallographic axis X is also shielded and shields at the two lateral sides of the plate oriented along crystallographic axis Y do not reach by the same distance the plate edge (second option). ^ EFFECT: increased homogeneity of monocrystal and accelerated growth thereof along Z axis. ^ 15 cl, 2 dwg |
