发明名称 PHOTO-LUMINESCENT EMITTER, SEMICONDUCTOR ELEMENT AND OPTRON BASED ON SAID DEVICES
摘要 FIELD: spectral-analytical, pyrometric and thermal-vision equipment. ^ SUBSTANCE: emitter has electro-luminescent diode of gallium arsenide, generating primary emission in wave length range 0,8-0,9 mcm, and also poly-crystal layer of lead selenide, absorbing primary emission and secondarily emitting in wave length range 2-5 mcm, and lead selenide includes additionally: admixture, directionally changing emission maximum wave length position as well as time of increase and decrease of emission pulse, and admixture, increasing power of emission. Photo-element includes lead selenide layer on dielectric substrate with potential barrier formed therein, and includes admixtures, analogical to those added to lead selenide of emitter. Optron uses emitter and photo-elements. Concentration of addition of cadmium selenide in poly-crystal layer of emitter is 3,5-4,5 times greater, than in photo-element. Open optical channel of Optron is best made with possible filling by gas or liquid, and for optimal synchronization and compactness emitter and/or photo-element can be improved by narrowband optical interference filters. ^ EFFECT: higher efficiency, broader functional capabilities. ^ 3 cl, 3 tbl, 6 dwg
申请公布号 RU2261502(C1) 申请公布日期 2005.09.27
申请号 RU20040104374 申请日期 2004.02.05
申请人 发明人 GORBUNOV N.I.;VARFOLOMEEV S.P.;DIJKOV L.K.;MARAKHONOV V.M.;MEDVEDEV F.K.
分类号 H01L31/101;H01L31/12;H01L33/26;H01L33/50 主分类号 H01L31/101
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