发明名称 |
Method for manufacturing a high frequency semiconductor structure and high frequency semiconductor structure |
摘要 |
A semiconductor structure for high frequency operation has a substrate with a doped well formed therein and a buffer layer made of a substrate material covers the well. The buffer layer is made of an undoped material and is disposed on a top side of the well for inhibiting an outdiffusion of a dopant from the well. At least a portion of the substrate is not covered by the buffer layer.
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申请公布号 |
US6949812(B2) |
申请公布日期 |
2005.09.27 |
申请号 |
US20020253197 |
申请日期 |
2002.09.24 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
LOSEHAND REINHARD;WERTHMANN HUBERT |
分类号 |
H01L21/331;H01L21/20;H01L21/205;H01L21/329;H01L21/822;H01L21/8222;H01L27/04;H01L27/06;H01L29/06;H01L29/732;H01L29/861;H01L29/868;H01L29/93;(IPC1-7):H01L31/075;H01L29/00;H01L21/823 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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