| 发明名称 |
VOLATILE MEMORY CELL TRANSISTOR HAVING GATE DIELECTRIC WITH CHARGE TRAPS AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
|
| 申请公布号 |
KR20050094200(A) |
申请公布日期 |
2005.09.27 |
| 申请号 |
KR20040019363 |
申请日期 |
2004.03.22 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, SANG DON;KIM, YIL WOOK;AHN, JIN HONG;PARK, YOUNG JUNE |
| 分类号 |
H01L27/10;G11C11/401;H01L21/265;H01L21/28;H01L21/314;H01L21/336;H01L21/822;H01L21/8238;H01L21/8242;H01L21/8246;H01L27/108;H01L29/51;H01L29/76;H01L29/78;H01L29/792;(IPC1-7):H01L29/792 |
主分类号 |
H01L27/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
