| 摘要 |
A method for manufacturing semiconductor devices is provided in which an organic adhesive layer is formed on the backside of a semiconductor wafer after being thinned by a backlapping process and cured to form a B-stage adhesive layer. Using the B-stage adhesive layer, the semiconductor device may then be attached to a circuit substrate and then subjected to additional curing to form a C-stage adhesive layer. Such semiconductor devices may also be attached directly to a lower semiconductor chip or, in the alternative, may be attached to a spacer mounted that is or will be mounted on a lower semiconductor chip or the circuit substrate. The organic adhesive is selected to counteract stresses induced by a passivation layer formed on the active surface, thereby reducing or preventing warping of the semiconductor wafer and eliminating the need for a separate resin paste adhesive during the chip attaching process. |
