发明名称 Method of forming solder bump using Chromium Under Barrier Metal
摘要 <p>PURPOSE: A method for forming a solder bump comprising a chromium under barrier metal is provided to prevent the fusion of a solder during a process for etching chromium under barrier metal. CONSTITUTION: A method for forming a solder bump comprising a chromium under barrier metal comprises the steps of: providing(110) a wafer having a protection layer for opening an electrode pad; forming(120) a chromium under barrier metal on the wafer; electroplating a solder(130); removing(140) an under barrier metal; and forming(150) a solder bump by reflowing the solder. The step of removing the under barrier metal comprises the steps of: forming a sensitive layer on the solder; removing the chromium under barrier metal by using the sensitive layer as a mask; and removing the sensitive layer.</p>
申请公布号 KR100502471(B1) 申请公布日期 2005.09.26
申请号 KR19980043307 申请日期 1998.10.16
申请人 发明人
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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