发明名称 |
METHOD OF FABRICATING A FIN FIELD EFFECT TRANSISTOR USING AN ISOTROPIC ETCHING TECHNIQUE |
摘要 |
<p>Methods of fabricating a fin field effect transistor (FinFET) are disclosed. Embodiments of the invention provide methods of fabricating FinFETs by optimizing a method for forming the fin so that a short channel effect is prevented and high integration is achieved. Accordingly, the fin which has a difficulty in its formation using the current photolithography-etching technique may be readily formed.</p> |
申请公布号 |
KR20050092933(A) |
申请公布日期 |
2005.09.23 |
申请号 |
KR20040018122 |
申请日期 |
2004.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEO, HYEOUNG WON;YANG, WOUN SUCK;SONG, DU HEON;YOUN, JAE MAN |
分类号 |
H01L29/78;H01L21/336;H01L29/786;(IPC1-7):H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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