发明名称 Thin film device, active matrix substrate, liquid crystal panel, electric device and method for processing a thin film device
摘要 <p>Any one of an insulating film forming a TFT, a silicon film and a conductive film is formed by applying a solution and annealing it. In a spin coater (102), a coating solution containing a thin film component which is supplied from a solution storage section (105) is spin-coated onto a substrate. The substrate after coating the coating solution is annealed in an annealing section (103) to form a coating film on the substrate. Additional laser annealing improves one of film characteristics, i.e., crystallinity, compactness and adhesiveness. Application of the coating solution or a resist by an ink jet process increases utilization of the solution and permits forming a patterned coating film. Since a thin film device in accordance with the present invention is inexpensive and has a high throughput, TFT production by a production system having high utilization of the coating solution drastically reduces initial investment and production cost of a liquid crystal display device. <IMAGE></p>
申请公布号 KR100516316(B1) 申请公布日期 2005.09.23
申请号 KR20047015330 申请日期 1997.05.14
申请人 发明人
分类号 G02F1/136;G02F1/1368;G02F1/1333;G02F1/1343;G02F1/1362;H01L21/20;H01L21/205;H01L21/225;H01L21/288;H01L21/31;H01L21/3205;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):G02F1/136;G02F1/134 主分类号 G02F1/136
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