发明名称 |
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element wherein the disconnection of a metal wiring layer can be controlled without complicating manufacturing processes. SOLUTION: The semiconductor element is provided with an n-type GaAs substrate 1 including a ridge 6 having an upper part and a lower part; and wiring 8c which is formed at least below the ridge 6 and has a bottom 8d and sides 8e which are stretched upward toward the bottom 8d, and in which the sides 8e except the bottom 8d are formed so as to connect the lower part and the upper part of the ridge 6. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005260020(A) |
申请公布日期 |
2005.09.22 |
申请号 |
JP20040070140 |
申请日期 |
2004.03.12 |
申请人 |
SANYO ELECTRIC CO LTD |
发明人 |
TAKEUCHI KUNIO;HAYASHI NOBUHIKO;KAMEYAMA SHINGO;TOMINAGA KOJI |
分类号 |
H01L21/28;H01L29/41;H01S5/042;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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地址 |
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