| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor that does not have such a limitation that a semiconductor layer has to be comprised of aπconjugated polymer having a substituent that has large dipole moment and moves freely around main chain structure in accordance with an external electric field. SOLUTION: The field effect transistor is provided with a gate electrode, a gate insulating film, a channel formation area formed of an organic semiconductor thin film made of aπconjugated polymer, and a source/drain electrode. Electrons in theπconjugated polymer are moved to the gate insulating film because of an electric field formed by applying a voltage to the gate electrode. When the application of the voltage to the gate electrode is stopped, the electrons in the gate insulating film return to theπconjugated polymer. Thus, the electric conductivity of the channel formation area formed of the organic semiconductor thin film can be controlled. COPYRIGHT: (C)2005,JPO&NCIPI
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